Imaging device having enhanced quantum efficiency

Details Imaging device having enhanced quantum efficiency Imaging device having enhanced quantum efficiency

1983-04-28

1986-06-10

Davie, James W.

Electric lamp and discharge devices

With temperature modifier

For lead-in-seal or stem protection

350166, 313367, H01J 3100, H01L 3100

Patent

active

045946051

ABSTRACT:
An imaging device such as a silicon vidicon has a wafer of single crystal semiconductor material having an input sensing region and a charge storage region. A potential barrier is included within the input sensing region for controlling blooming. A passivation region is also included within the input sensing region to stabilize the atomic energy level along a first surface of the wafer. An anti-reflection layer of zinc sulfide and an anti-reflection layer of magnesium fluoride or Cryolite are sequentially deposited on the first surface of the wafer. The two anti-reflection layers form an anti-reflection region which enhances the quantum efficiency of the device in the wavelength range of 400 to 500 nanometers. Each of the layers has an optical thickness substantially equal to a quarter of the wavelength of light incident on the device. A method of forming the anti-reflection region is also disclosed.

REFERENCES:
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patent: 2601806 (1952-07-01), Turner
patent: 3076861 (1963-02-01), Samulon et al.
patent: 3849738 (1974-11-01), Hakki
patent: 4055442 (1977-10-01), Crosher
patent: 4228446 (1980-10-01), Kramer
patent: 4260222 (1981-04-01), Kozawa
patent: 4317844 (1982-03-01), Carlson
Pacey, D. J., Multilayer Anti-Reflection Coatings for Optical Components, Manufacturing Optics Internt'l., vol. 22, No. 5 (11/1969), pp. 270-283.
CRC Press, Handbook of Chemistry and Physics, 55th Edition (1974) p. B-106.
U.S. patent application Ser. No. 387,365, filed on Jun. 11, 1982, by Savoye et al.
U.S. patent application Ser. No. 636,562, filed on Aug. 1, 1984, by Savoye et al. and entitled, "Imaging Device having Improved High Temperature Performance".
"The Monitoring of Thin Films for Optical Purposes", by H. A. Macleod, pp. 383-390, Vacuum/vol. 27/No. 4.

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