Imaging device equipped with a last copper and aluminum...

Details Imaging device equipped with a last copper and aluminum... Imaging device equipped with a last copper and aluminum...

2007-12-20

2011-10-04

Parekh, Nitin (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S774000, C257SE23142

Reexamination Certificate

active

08030774

ABSTRACT:
A microelectronic device may include a substrate, a plurality of components on the substrate, an insulating layer adjacent the substrate, and a plurality of metallic interconnection levels within the insulating layer and for the plurality of components. The plurality of metallic interconnection levels may include at least one given metallic level including a plurality of conductive lines of a first metallic material, and at least one other metallic level adjacent the at least one given metallic level. The at least one other metallic level may include at least one conductive zone of the first metallic material and coupled to at least one of the plurality of conductive lines of the at least one given metallic level, and at least one other conductive zone of a second metallic material and coupled to at least one other of the plurality of conductive lines of the at least one given metallic level.

REFERENCES:
patent: 4789648 (1988-12-01), Chow et al.
patent: 6664632 (2003-12-01), Duesman et al.
patent: 7397125 (2008-07-01), Oda
patent: 2001/0045655 (2001-11-01), Matsubara
patent: 2002/0139572 (2002-10-01), Morozumi
patent: 2003/0164532 (2003-09-01), Liu et al.
patent: 2004/0140564 (2004-07-01), Lee et al.
patent: 2004/0245637 (2004-12-01), Horak et al.
patent: 2005/0242402 (2005-11-01), Ohkawa
patent: 2006/0163734 (2006-07-01), Thei et al.

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