Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-10-09
2010-12-14
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S414000, C257S431000, C257SE31127, C257SE31001, C438S070000
Reexamination Certificate
active
07851879
ABSTRACT:
An imaging device according to an example of the invention comprises a first photoelectric conversion unit which is formed at an imaging area of a substrate, a second photoelectric conversion unit for black reference observation which is formed at an optical black area between the imaging area of the substrate and a peripheral circuit area where a peripheral circuit is formed, an insulating film which is formed on the imaging area and the optical black area of the substrate, and a shielding unit which is formed by connecting a contact and a interconnect in an accumulating direction of the insulating film from the substrate surface to the insulating film surface.
REFERENCES:
patent: 6987537 (2006-01-01), Inoue
patent: 7205623 (2007-04-01), Hong et al.
patent: 2008/0105908 (2008-05-01), Lee
patent: 2001-298175 (2001-10-01), None
patent: 2006-93687 (2006-04-01), None
Kabushiki Kaisha Toshiba
Liu Benjamin Tzu-Hung
Ngo Ngan
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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