Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Reexamination Certificate
2009-03-04
2010-10-26
Fahmy, Wael M (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
C438S054000, C438S069000, C438S188000, C438S233000, C438S199000, C257S059000, C257S292000, C257S233000, C257S431000, C257S466000, C257SE27062, C257SE27067, C257SE27108
Reexamination Certificate
active
07820467
ABSTRACT:
A solid-state imaging device, a line sensor and an optical sensor for enhancing a wide dynamic range while keeping high sensitivity with a high S/N ratio, and a method of operating a solid-state imaging device for enhancing a wide dynamic range while keeping high sensitivity with a high S/N ratio are provided. The solid-state imaging device comprises an integrated array of a plurality of pixels, each of which comprises a photodiode PD for receiving light and generating photoelectric charges, a transfer transistor Tr1for transferring the photoelectric charges, and a storage capacitor element C connected to the photodiode PD at least through the transfer transistor Tr1for accumulating, at least through the transfer transistor Tr1, the photoelectric charge overflowing from the photodiode PD during accumulating operation.
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Armand Marc
Fahmy Wael M
Foley & Lardner LLP
National University Corporation Tohoku University
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