Imaging device

Television – Camera – system and detail – Solid-state image sensor

Reexamination Certificate

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C348S300000

Reexamination Certificate

active

07639298

ABSTRACT:
Adjacent pixels in a pixel circuit of an imaging device use a primary capacitance, an amplifying transistor, a reset switch and a selection switch in common. Each pixel has a photodiode and a transfer switch having first and second gates provided on the photodiode side and the primary capacitance side, respectively. In a pixel downsampling read mode, the first and second gate voltages of each pixel to be discarded are brought to high level, and thereafter the first and second gate voltages of each pixel to be read are brought to high level, to transfer charge generated in the photodiode of the pixel to be read to the primary capacitance and the photodiode in each pixel to be discarded. This enables reduction of the potential of the primary capacitance, and hence reduction of the pixel sensitivity than using only the primary capacitance to store charge transferred from the transfer switch.

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patent: 7542085 (2009-06-01), Altice et al.
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patent: 2002-325204 (2002-11-01), None
Mori, et al. “1/4-Inch 2-Mpixel MOS Image Sensor with 1.75 Transistors/Pixel.” IEEE Journal of Solid-State Circuits. Dec. 2004. 39:12; 2426-2430.

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