Imaging apparatus and radiation imaging apparatus

Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system

Reexamination Certificate

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C250S370110, C250S370080

Reexamination Certificate

active

08067743

ABSTRACT:
Pixels including a photoelectric conversion element1, a signal transfer TFT (thin film transistor)2electrically connected to the photoelectric conversion element, and a reset TFT3electrically connected to the photoelectric conversion element and for applying a bias to the photoelectric conversion element are two-dimensionally disposed on the insulating substrate, and the photoelectric conversion element1, signal transfer TFT2, and reset TFT3are electrically connected through a common contact hole9. A source or drain electrode of the signal transfer TFT2and the source or drain electrode of the reset TFT3are formed from a common electroconductive layer.

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Office Action dated Mar. 4, 2011, issued by the Japanese Patent Office in counterpart Japanese application 2006-019032 (with translation).

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