Imager with improved sensitivity

Details Imager with improved sensitivity Imager with improved sensitivity

2005-10-25

2005-10-25

Stein, Stephen (Department: 1775)

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

C428S620000, C428S446000, C257S431000, C257S440000, C257S291000, C438S024000, C438S048000, C438S584000

Reexamination Certificate

active

06958194

ABSTRACT:
An imaging cell reduces recombination losses and increases sensitivity by forming a low resistance lateral path with a silicon germanium layer of a conductivity type that is sandwiched between silicon layers of the same conductivity type. The silicon germanium layer also provides a quantum well from which photo-generated electrons find it difficult to escape, thereby providing a barrier that reduces cross-talk.

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U.S. patent application Ser. No. 10/219,836, Hopper et al., filed Aug. 15, 2002.

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