Imager photo diode capacitor structure with reduced process...

Details Imager photo diode capacitor structure with reduced process... Imager photo diode capacitor structure with reduced process...

2006-03-07

2006-03-07

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S060000, C438S257000, C438S240000, C438S301000, C438S308000, C438S244000

Reexamination Certificate

active

07008816

ABSTRACT:
A pixel cell having two capacitors connected in series where each capacitor has a capacitance approximating that of the periphery capacitors and such that the effective capacitance of the series capacitors is smaller than that of each of the periphery capacitors. The series-connected capacitors are coupled to the floating diffusion (FD) region for receiving “surplus” charge from the FD region during saturation conditions.

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