Imager having photosensitive material contains polymorphous...

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C250S239000

Reexamination Certificate

active

10519012

ABSTRACT:
Assembly of sensors formed as an imager with a detection brick including a photosensitive material, a brick for addressing and optionally processing signals from the sensor(s), an interconnection brick located between the detection brick and the addressing brick, this brick including connection pads, characterized in that the photosensitive material of the detection brick contains polymorphous silicon.The invention also relates to a method for the making of the latter.

REFERENCES:
patent: 4926052 (1990-05-01), Hatayama et al.
patent: 5682037 (1997-10-01), de Cesare et al.
patent: 6018187 (2000-01-01), Theil et al.
patent: 6114739 (2000-09-01), Theil et al.
patent: 0 726 605 (1996-06-01), None
patent: 1 050 907 (2000-02-01), None
Afanas'ev et al., “Photodetector structures based on amorphous hydrogenated silicon with nanocrystalline inclusions”, Dec. 2001, The Optical Society of America, J. Opt. Technol., vol. 68, No. 12, pp. 949-951.
Chatterjee et al., “The origin of current gain under illumination in amorphous siliconn-i-p-i-nstructures”, Feb. 15, 2000, Journal of Applied Physics, vol. 87, No. 4, pp. 1874-1881.
Meaudre et al., “Midgap density of states in hydrogenated polymorphous silicon”, Jul. 15, 1999, Journal of Applied Physics, vol. 86, No. 2, pp. 946-950.
Morral, et al. “In situ investigation of polymorphous silicon deposition”, 2000, Journal of Non-Crystalline Solids 266-269, pp. 48-53.
Morral et al., “Structure of plasma-deposited polymorphous silicon”, 2002, Journal of Non-Crystalline Solids 299-302, pp. 284-289.
Poissant et al., “Metastability study and optimization of polymorphous silicon solar cells: the state-of-the-art”, 2002, Journal of Non-Crystalline Solids 299-302, pp. 1173-1178.
Razeghi et al., “Semiconductor ultraviolet detectors”, May 15, 1996, J. Appl. Phys., vol. 79, No. 10, pp. 7433.
Topic et al., “Adjustable ultraviolet-sensitive detectors based on amorphous silicon”, Apr. 16, 2001, Applied Physics Letters, vol. 78, No. 16, pp. 2387-2389.
Voz et al., “Thin-Film transistors with polymorphous silicon active layer”, 2002, Journal of Non-Crystalline Solids 299-302, pp. 1345-1350.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Imager having photosensitive material contains polymorphous... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Imager having photosensitive material contains polymorphous..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Imager having photosensitive material contains polymorphous... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3762002

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.