Imager cell with pinned transfer gate

Details Imager cell with pinned transfer gate Imager cell with pinned transfer gate

2005-06-21

2005-06-21

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S221000, C257S222000, C257S223000, C257S184000

Reexamination Certificate

active

06909126

ABSTRACT:
An imager cell includes a photoreceptor, a sense node, and a pinned transfer gate. The pinned transfer gate is tied to the same potential of a substrate of the imager cell and is disposed between the photoreceptor and the sense node in order to transfer charge between the photoreceptor and the sense node. The imager further includes a reset transistor disposed to reset the sense node, and an output amplifier coupled to the sense node. Control circuitry supplies a photoreceptor readout clock to the photoreceptor. The readout clock includes an integration period and a transfer period. According to various embodiments of the invention, the imager cell provides improved noise performance, selective charge capacities, and improved blue light response beyond that of conventional imager cells.

REFERENCES:
patent: 4994875 (1991-02-01), Hynecek
patent: 5077592 (1991-12-01), Janesick
patent: 5121214 (1992-06-01), Turko et al.
patent: 6603144 (2003-08-01), Tsunai
patent: 2002/0121655 (2002-09-01), Zheng et al.
patent: 2002/0121656 (2002-09-01), Guidash

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