Image sensors with optical trench

Details Image sensors with optical trench Image sensors with optical trench

2008-01-01

2008-01-01

Epps, Georgia (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C250S214100, C257S291000, C257S432000

Reexamination Certificate

active

07315014

ABSTRACT:
A device and method for providing an optical trench structure for a pixel which guides incoming light onto the photosensor of the pixel. The optical trench structure has an optically reflecting barrier that substantially mitigates optical crosstalk. The optical trench structure is made of low dielectric constant material with an index of refraction that is less than the index of refraction of the material of surrounding layers (e.g., the substrate). This difference in refractive index causes an internal reflection into an optical path existing between a lens and pixel.

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Nixon et al., “256x256 CMOS Active Pixel Sensor Camera-on-a-Chip,” IEEE Journal of Solid-State Circuits, vol. 31(12), pp. 2046-2050 (1996).
Mendis et al., “CMOS Active Pixel Image Sensors,” IEEE Transactions on Electron Devices, vol. 41(3), pp. 452-453 (1994).

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