Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2007-09-18
2007-09-18
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S292000
Reexamination Certificate
active
11143783
ABSTRACT:
An image sensor includes a semiconductor substrate of a first conductivity type, a photodiode of a second conductivity type located in the substrate, a hole accumulated device (HAD) region of the first conductivity type located over the photodiode, a thin surface diffusion region formed on the surface of the HAD region, and a transfer gate located over the surface of the substrate adjacent the HAD region. The image sensor further includes a first channel region of the first conductivity type located in the substrate and aligned below the transfer gate, a second channel region of the second conductivity type located in the substrate between said transfer gate and the first channel region, and an floating diffusion region which is located in the substrate and which electrically contacts the second channel region.
REFERENCES:
patent: 5514887 (1996-05-01), Hokari
patent: 5625210 (1997-04-01), Lee et al.
patent: 5904493 (1999-05-01), Lee et al.
patent: 6027955 (2000-02-01), Lee et al.
patent: 6100551 (2000-08-01), Lee et al.
patent: 6677656 (2004-01-01), François
patent: 6730899 (2004-05-01), Stevens et al.
patent: 7057219 (2006-06-01), Park et al.
patent: 2005/0280046 (2005-12-01), Shin
patent: 11-274450 (1999-10-01), None
patent: 2004-087963 (2004-03-01), None
patent: 1020020057250 (2002-07-01), None
patent: 1020030090871 (2003-12-01), None
Park Chan
Shin Jong-cheol
Prenty Mark V.
Volentine & Whitt PLLC
LandOfFree
Image sensors for reducing dark current and methods of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Image sensors for reducing dark current and methods of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Image sensors for reducing dark current and methods of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3779204