Image sensors and methods of manufacturing same including semico

Details Image sensors and methods of manufacturing same including semico Image sensors and methods of manufacturing same including semico

1986-12-12

1989-02-07

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Optical or pre-photocell system

357 30, 437226, H01J 4014, H01L 2714

Patent

active

048033758

ABSTRACT:
An image sensor, comprising a semiconductor layer formed on at least a first region of a substrate; first electrodes arranged in line and electrically connected to the semiconductor layer of said first region; and second electrodes arranged in line and electrically connected to said semiconductor layer of said first region. The second electrodes are respectively formed as a common electrode, and each of the first electrodes, a portion of said second electrode facing the first electrode and the semiconductor layer positioned therebetween form a photo-sensing element. First wires respectively extend from said first electrodes to a second region of said substrate. An insulating layer is continuously formed on the first and second regions, covering said photo-sensing elements and the first wires as well as second wires formed in parallel on the insulating layer of said second region. The second wires are electrically connected to the first wires at through holes formed in the insulating layer.

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