Image sensor with vertically integrated thin-film photodiode

Details Image sensor with vertically integrated thin-film photodiode Image sensor with vertically integrated thin-film photodiode

2007-10-30

2007-10-30

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S048000, C438S096000, C257S292000, C257S458000, C257SE27133, C257SE27141

Reexamination Certificate

active

11282428

ABSTRACT:
An image sensor with a vertically integrated thin-film photodiode includes a bottom doped layer of a PIN photodiode imbedded in a dielectric layer, wherein a bottom surface of the bottom doped layer completely contacts its corresponding underlying pixel electrode. The bottom doped layers of the PIN photodiodes are formed by a self-aligned and damascene method, therefore the pixel electrodes are not exposed to the I-type amorphous silicon layer of the PIN photodiodes. Moreover, the transparent electrode connects the PIN photodiodes to an external ground voltage power through a ground pad which is a portion of a top metal layer.

REFERENCES:
patent: 6709885 (2004-03-01), Uppal et al.
patent: 6759262 (2004-07-01), Theil et al.
patent: 6852566 (2005-02-01), Yaung

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