Image sensor with vertically integrated thin-film photodiode

Details Image sensor with vertically integrated thin-film photodiode Image sensor with vertically integrated thin-film photodiode

2006-02-07

2006-02-07

Tran, Mai-Huong (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257S053000, C257S292000, C257S458000, C257S755000, C257S756000, C257S073000, C257S074000, C257S096000

Reexamination Certificate

active

06995411

ABSTRACT:
An image sensor has a vertically integrated thin-film photodiode. In one implementation, the image sensor has a substrate, an interconnection structure adjacent to the substrate, wherein the interconnection structure includes a top metal layer comprising a plurality of first metal pads for thin-film photodiodes and a second metal pad for a ground pad, a dielectric layer with a plurality of first openings and second opening disposed on the interconnection structure, a plurality of bottom doped layers with a first conductive type respectively disposed in the first openings, wherein each bottom doped layer contacts the corresponding first metal pad without extending outside the surface of the corresponding first metal pad, an I-type layer disposed over at least one bottom doped layer and the dielectric layer, an upper doped layer with a second conductive type disposed over the I-type layer, and a transparent electrode disposed over the upper doped layer and contacting the second metal pad through the second opening in the dielectric layer.

REFERENCES:
patent: 6852566 (2005-02-01), Yaung

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