Image sensor with stacked and bonded photo detection and...

Details Image sensor with stacked and bonded photo detection and... Image sensor with stacked and bonded photo detection and...

2005-12-28

2009-02-24

Sohn, Seung C (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C257S292000, C257S293000, C438S067000, C438S074000, C438S668000

Reexamination Certificate

active

07495206

ABSTRACT:
A complementary metal oxide semiconductor (CMOS) device with a three dimensional integration structure and a method for fabricating the same are provided. An image sensor includes a first substrate in which a photo detection device is formed; a second substrate in which a peripheral circuit is formed, wherein the first substrate and the second substrate are bonded through a plurality of bonding pads formed on both the first substrate and the second substrate, and a back side of the first substrate is turned upside down; and a microlens formed on a top portion of the back side of the first substrate.

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