Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-04-04
2009-10-27
Rose, Kiesha L (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S290000, C257S291000, C257S292000, C257S461000, C257S466000, C257SE27130, C257SE27131, C257SE27133, C257SE27134, C257SE27137
Reexamination Certificate
active
07608903
ABSTRACT:
An imager pixel utilizing a silicon-on-insulator substrate, a photodiode in said substrate below the buried oxide, and a dual contact to said photodiode and methods of forming said imager pixel. The photodiode has an increased fill factor due to its increased size relative to the pixel.
REFERENCES:
patent: 4575462 (1986-03-01), Dobson et al.
patent: 5953582 (1999-09-01), Yudasaka et al.
patent: 6140630 (2000-10-01), Rhodes
patent: 6204524 (2001-03-01), Rhodes
patent: 6310366 (2001-10-01), Rhodes et al.
patent: 6326652 (2001-12-01), Rhodes
patent: 6333205 (2001-12-01), Rhodes
patent: 6376868 (2002-04-01), Rhodes
patent: 6465786 (2002-10-01), Rhodes
patent: 6818930 (2004-11-01), Rhodes et al.
patent: 6878568 (2005-04-01), Rhodes et al.
patent: 6930336 (2005-08-01), Merrill
patent: 6949445 (2005-09-01), Rhodes et al.
patent: 7105906 (2006-09-01), Hopper et al.
patent: 7132724 (2006-11-01), Merrill
patent: 7145190 (2006-12-01), Yaung et al.
patent: 7166880 (2007-01-01), Merrill et al.
patent: 7521776 (2009-04-01), Cannon et al.
patent: 2001/0004117 (2001-06-01), Chikamatsu et al.
patent: 2002/0121655 (2002-09-01), Zheng et al.
patent: 2003/0094654 (2003-05-01), Christensen et al.
patent: 2003/0219950 (2003-11-01), Lyding et al.
patent: 2004/0161868 (2004-08-01), Hong
patent: 2005/0045926 (2005-03-01), Mouli
patent: 2005/0145848 (2005-07-01), Mouli
patent: 2005/0145902 (2005-07-01), Mouli
patent: 2005/0205930 (2005-09-01), Williams, Jr.
patent: 2005/0212045 (2005-09-01), Tamai
patent: 2006/0125038 (2006-06-01), Mabuchi
Marczewski, J., et al. Monolithic Silicon Pixel Detectiors in SOI Technology; Presented by Jacek Marczewski, Prague, Nov. 15-18, 2002.
SOI Research Group; SOI; Peking University, Institute of Microelectronics; http://www.ime.pku.edu.cn/soi/en/introduction1.htm; May 17, 2005.
Burns, James, et al. 3D Circuit Integration Technology for Multiproject Fabrication; MIT Lincoln Laboratory, Lexington, MA, 02173; Apr. 1, 2000.
Aptina Imaging Corporation
Dickstein & Shapiro LLP
Rose Kiesha L
Ward Eric
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