Image sensor with SOI substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S290000, C257S291000, C257S292000, C257S461000, C257S466000, C257SE27130, C257SE27131, C257SE27133, C257SE27134, C257SE27137

Reexamination Certificate

active

07608903

ABSTRACT:
An imager pixel utilizing a silicon-on-insulator substrate, a photodiode in said substrate below the buried oxide, and a dual contact to said photodiode and methods of forming said imager pixel. The photodiode has an increased fill factor due to its increased size relative to the pixel.

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