Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2007-02-06
2007-02-06
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S223000, C257S228000, C257S231000
Reexamination Certificate
active
11005515
ABSTRACT:
The CCD image sensor addresses the problem of noise, due to background charge generated by Compton scattering of gamma rays. In applications, in which an imager must operate in a high-radiation environment, such background noise reduces the video signal
oise. This imager reduces the amount of charge collected from Compton events, while giving up very little sensitivity to photons in the visible
ear IR.
REFERENCES:
patent: 5270558 (1993-12-01), Reich et al.
patent: 5693968 (1997-12-01), Cherry et al.
patent: 5880777 (1999-03-01), Savoye et al.
patent: 7091530 (2006-08-01), Reich et al.
Burke Barry E.
Reich Robert K.
AFMCLO/JAZ
Auton William G.
Crane Sara
The United States of America as represented by the Secretary of
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