Image sensor with recessed planarizing layers and method for...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal

Reexamination Certificate

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Reexamination Certificate

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07109054

ABSTRACT:
The present invention relates to the fabrication of image sensors and especially to color image sensors. The image sensor includes a region in which there is a photosensitive matrix onto which the image to be converted into electronic signals is projected and an outer region comprising peripheral electronic circuits for driving the matrix or for processing the image signals. After formation on a substrate of a stack of conducting layers and insulating layers serving for the production of the matrix of the peripheral circuits, a substantial thickness of insulation is removed only in the region of the matrix before a mosaic of color filters is deposited so as to reduce the height of the filters relative to the photosensitive regions.

REFERENCES:
patent: 4841348 (1989-06-01), Shizukuishi et al.
patent: 5273910 (1993-12-01), Tran et al.
patent: 6297071 (2001-10-01), Wake
patent: 0 721 220 (1996-07-01), None
patent: 1 050 907 (2000-11-01), None

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