Image sensor with multilayered amorphous silicon contact

Details Image sensor with multilayered amorphous silicon contact Image sensor with multilayered amorphous silicon contact

1990-08-13

1991-08-27

James, Andrew J.

357 2, H01L 2714, H01L 3100, H01L 4500

Patent

active

050437844

ABSTRACT:
An image sensor having a lower electrode disposed on a surface of a substrate; a multilayered amorphous silicon layer formed on the surface of the substrate so as to cover an end portion of the lower electrode; and an upper electrode formed on the surface of the substrate so as to cover an end portion of the amorphous silicon layer. An angle defined by an end surface of the end portion of the amorphous silicon layer and the surface of the substrate having the lower electrode disposed thereon is within a range of from 30.degree. to 60.degree. and a distance between edges of two neighboring layers of the amorphous silicon layer at the end portion of the amorphous silicon layer is equal to or less than 500.ANG..

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