Image sensor with inter-pixel isolation

Details Image sensor with inter-pixel isolation Image sensor with inter-pixel isolation

2008-10-16

2010-11-02

Coleman, W. David (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S070000, C257SE21001

Reexamination Certificate

active

07824944

ABSTRACT:
An image sensor with a plurality of photodiodes that each is adjacent to a first region constructed from a first type of material and comprises a second region constructed from a second type of material. Located between second regions of adjacent photodiodes is a barrier region. The photodiodes are reverse biased to create depletion regions within the substrate. The barrier region limits the lateral growth of the depletion regions and inhibits depletion merger between adjacent photodiodes.

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