Image sensor with improved color crosstalk

Details Image sensor with improved color crosstalk Image sensor with improved color crosstalk

2011-04-19

2011-04-19

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

Reexamination Certificate

active

07928478

ABSTRACT:
An image sensor comprises a substrate of a first conductivity type. First and second pixels are arrayed over the substrate. A potential barrier is formed in a region of the substrate corresponding to the first pixel but not in a region of the substrate corresponding to the second pixel. The second pixel is responsive to a color having a wavelength longer than the color to which the first pixel is responsive. The potential barrier is doped with dopants by a high energy ion implantation dopants or by an ion implantation or diffusion during epitaxial growth of the P-type epitaxial layer.

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patent: 2006/0163618 (2006-07-01), Park
patent: 2006/0214249 (2006-09-01), Nam et al.
patent: 2007/0023801 (2007-02-01), Hynecek
patent: 10-2006-0103660 (2006-04-01), None
patent: 10-2006-0085481 (2006-07-01), None

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