Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-05-09
2006-05-09
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S414000, C257S428000, C257S431000, C257S449000
Reexamination Certificate
active
07042058
ABSTRACT:
An image sensor and method is provided to improve the measurement of a dark signal reference while substantially suppressing radiation charges that enter an active area of the image sensor from reaching a shielded dark signal detector. In one implementation, dark signal detector is shielded and separated from the active area to substantially reduce the radiation charges that reach the dark signal detector. In another implementation, the image sensor includes a radiation guard that is disposed between the active area and the shielded detector. When radiation or light is permitted to enter the active area, the guard when adequately biased attracts and collects radiated charges that may otherwise travel beyond the active area to reach the shielded detector and contaminate a measurement for the dark signal reference.
REFERENCES:
patent: 2003/0107406 (2003-06-01), Li et al.
Bencuya Selim
Mann Richard A.
ESS Technology, Inc.
Farjami & Farjami LLP
Flynn Nathan J.
Quinto Kevin
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