Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-10-17
2009-11-03
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S059000, C257S072000, C257S222000, C257S225000, C257S232000, C257S234000, C257S436000, C257SE31097, C257SE27130
Reexamination Certificate
active
07612425
ABSTRACT:
An image sensor includes: a light source that irradiates a light on an object; a lens body that converges a reflection of the light from the object; a plurality of IC chips that receive the reflection passed through the lens body; and a transparent member provided between the IC chips and the lens body. The transparent member includes a refractive index changing region provided at a portion opposite to a gap between adjacent IC chips. A refractive index in the refractive index changing region increases continuously or stepwise toward an inner portion of the transparent member from a surface of the transparent member on an IC chips side so that the refractive index changing region refracts a part of the reflection to be incident into the gap to the IC chips.
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Endo Takafumi
Nokami Yohei
Lopez Fei Fei Yeung
Mitsubishi Electric Corporation
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tran Minh-Loan T
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