Image sensor structure with recessed separator layer

Details Image sensor structure with recessed separator layer Image sensor structure with recessed separator layer

2007-02-15

2009-12-29

Lee, Hsien-ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257SE29336

Reexamination Certificate

active

07638799

ABSTRACT:
An image sensor structure includes a plurality of pixels formed on a substrate. Each pixel includes an image senor interconnect structure, a separator layer and an electrode layer, wherein the separator layer has a first thickness an a sidewall of the separator layer is recessed from a sidewall of the electrode layer. A first doped amorphous silicon layer id formed on the electrode layer, wherein the separator layer and the first doped amorphous silicon layer of a pixel are disconnected from that of an adjacent pixel.

REFERENCES:
patent: 6373117 (2002-04-01), Theil
patent: 2004/0041224 (2004-03-01), Chao et al.
patent: 2004/0266053 (2004-12-01), Varghese
patent: 2006/0049439 (2006-03-01), Oh et al.
patent: 2006/0118795 (2006-06-01), Araki

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