Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-06-20
2006-06-20
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S434000, C257S459000
Reexamination Certificate
active
07064404
ABSTRACT:
An image sensor structure includes a substrate, four posts, a photosensitive chip, a plurality of wires, a glue layer, and a transparent layer. The substrate has an upper surface on which first electrodes are formed, and a lower surface on which second electrodes are formed. The four posts are arranged on the four angle of the upper surface of the substrate individually. The photosensitive chip is mounted on the upper surface of the substrate. The plurality of wires are electrically connected the photosensitive chip to the first electrodes of the substrate. The glue layer is surrounded to the periphery of the upper surface of the substrate for surrounding the photosensitive chip, and covered the part of the wires. The transparent layer is arranged onto the four posts and the glue layer to cover the photosensitive chip.
REFERENCES:
patent: 6384472 (2002-05-01), Huang
patent: 6849915 (2005-02-01), Tsai
Chang Wei
Hsieh Figo
Hsin Chung Hsien
Tsai Worrell
Wang Tony
Ho Tu-Tu
Kingpak Technology Inc.
Pro-Techtor Int'l Services
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