Image sensor pixel having a lateral doping profile formed...

Details Image sensor pixel having a lateral doping profile formed... Image sensor pixel having a lateral doping profile formed...

2005-01-14

2010-02-23

Prenty, Mark (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257SE27132

Reexamination Certificate

active

07666703

ABSTRACT:
An active pixel using a transfer gate that has a polysilicon gate doped with indium. The pixel includes a photosensitive element formed in a semiconductor substrate and an n-type floating node formed in the semiconductor substrate. An n-channel transfer transistor having a transfer gate is formed between the floating node and the photosensitive element. The pixel substrate has a laterally doping gradient doped with an indium dopant.

REFERENCES:
patent: 5181093 (1993-01-01), Kawaura
patent: 6504193 (2003-01-01), Ishiwata et al.
patent: 7387908 (2008-06-01), Patrick
patent: 7432543 (2008-10-01), Rhodes
patent: 7449380 (2008-11-01), Williams et al.
patent: 2004/0173799 (2004-09-01), Patrick
patent: 2004/0188727 (2004-09-01), Patrick
patent: 1 450 410 (2004-08-01), None
patent: 1 450 410 (2006-04-01), None
patent: 1 667 232 (2006-06-01), None
patent: 1 768 186 (2007-03-01), None
patent: 1 833 093 (2007-09-01), None
European Search Report and Opinion dated Apr. 17, 2007, Application No. 05 257 876.2, Application filed Dec. 20, 2005; 9 pages.
European Office Action dated Sep. 21, 2007, Application No. 05 257 876.2, Application filed Dec. 20, 2005; 11 pages.
Response to European Office Action filed Feb. 1, 2008, Application No. 05 257 876.2, Application filed Dec. 20, 2005; 11 pages.
European Office Action dated Dec. 8, 2008, Application No. 05 257 876.2, Application filed Dec. 20, 2005; 4 pages.
Chinese First Office Action with English Translation, Application No. 2006100054115, Application filed Jan. 13, 2006; 10 pages.
Taiwan Certificate of Patent dated Sep. 21, 2006, Invention No. I 262596, Application No. 094143732, Application filed Dec. 6, 2005; 4 pages.

Affiliated with

Also associated with

Rating

Image sensor pixel having a lateral doping profile formed... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Image sensor pixel having a lateral doping profile formed..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Image sensor pixel having a lateral doping profile formed... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4205049