Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Reexamination Certificate
2008-01-28
2010-02-16
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
C257S725000, C257SE23124, C257SE23145
Reexamination Certificate
active
07663231
ABSTRACT:
This invention provides an image sensor module with a three-dimensional die-stacking structure. By filling a conductive material into through silicon vias within at least one image sensor die, and into via holes within an insulating layer, vertical electrical connections are formed between the image sensor die and an image processor buried in the insulating layer. A plurality of solder bumps is formed on a backside of the image sensor module so that the module can be directly assembled onto a circuit board. The image sensor module of this invention is characterized by a wafer-level packaging architecture and a three-dimensional die-stacking structure, which reduces electrical connection lengths within the module and thus reduces an area and height of the whole packaged module.
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Chang Hsiang-Hung
Chang Shu-Ming
Chiang Chia-Wen
Kuo Tzu-Ying
Birch & Stewart Kolasch & Birch, LLP
Industrial Technology Research Institute
Ngo Ngan
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