Image sensor including a photoelectric conversion film

Details Image sensor including a photoelectric conversion film Image sensor including a photoelectric conversion film

2011-04-12

2011-04-12

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S292000, C257SE27130

Reexamination Certificate

active

07923727

ABSTRACT:
This image sensor comprises a plurality of pixel electrodes, a photoelectric conversion film arranged on the plurality of pixel electrodes, a dummy electrode formed on an end of the photoelectric conversion film for ejecting charges generated in the vicinity of the end of the photoelectric conversion film and a first transistor for controlling ejection of charges flowing into the dummy electrode.

REFERENCES:
patent: 4364973 (1982-12-01), Koike et al.
patent: 2002/0056810 (2002-05-01), Kobayashi et al.
patent: 2509592 (1996-04-01), None

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