Image sensor having TFT gate electrode surrounding the photoelec

Details Image sensor having TFT gate electrode surrounding the photoelec Image sensor having TFT gate electrode surrounding the photoelec

1995-01-26

1996-06-11

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257292, 257444, 257448, 257440, 257294, 2502081, H01L 2904, H01L 31036, H01L 310376, H01L 3120

Patent

active

055258131

ABSTRACT:
An image sensor is reduced in size by combining a photoelectric conversion element with a transfer element thin film transistor (TFT). The photoelectric conversion element comprises a lamination including a metal electrode, a photoconductive layer and a transparent electrode. The TFT transfer element comprises a gate electrode, a drain electrode and a source electrode. In the image sensor, the metal electrode of the photoelectric conversion element also serves as the drain electrode of the TFT. In addition, the gate electrode is formed around the photoelectric conversion element, and the source electrode is formed around the gate electrode.

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patent: 5204519 (1993-04-01), Nishihara et al.

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