Image sensor having photo diode and method for manufacturing...

Details Image sensor having photo diode and method for manufacturing... Image sensor having photo diode and method for manufacturing...

2006-06-20

2006-06-20

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C257S184000

Reexamination Certificate

active

07063998

ABSTRACT:
An image sensor having a photo diode with improved sensitivity, junction leakage and electron capacity, and a method for manufacturing the image sensor, are provided. The provided image sensor includes a semiconductor substrate and a p-type photo diode region formed on a selected region of the semiconductor substrate. A first n-type photo diode region is formed underneath the p-type photo diode region, contacting an interface of the p-type photo diode region, and a second n-type photo diode region is formed to surround the first n-type photo diode region. Here, impurities composing the first n-type photo diode region have smaller projection distance and diffusivity than impurities composing the second n-type photo diode region.

REFERENCES:
patent: 5191399 (1993-03-01), Maegawa et al.
patent: 5500550 (1996-03-01), Morishita
patent: 5563429 (1996-10-01), Isogai
patent: 5686857 (1997-11-01), Heminger et al.
patent: 6610557 (2003-08-01), Lee et al.
patent: 6677656 (2004-01-01), François

Affiliated with

Also associated with

Rating

Image sensor having photo diode and method for manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Image sensor having photo diode and method for manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Image sensor having photo diode and method for manufacturing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3706286