Image sensor having micro-lenses with integrated color...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C257S098000

Reexamination Certificate

active

06861280

ABSTRACT:
An image sensor comprising a plurality of pixels formed in a semiconductor substrate, each pixel including a light sensitive element, and a color filter material formed over the light sensitive element, the color filter material formed in a micro-lens shape.

REFERENCES:
patent: 5336367 (1994-08-01), Nomura
patent: 6261861 (2001-07-01), Pai et al.
patent: 6274917 (2001-08-01), Fan et al.
patent: 6297071 (2001-10-01), Wake
patent: 6362513 (2002-03-01), Wester
patent: 6436851 (2002-08-01), Young et al.
patent: 20010042876 (2001-11-01), Wester

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