Image sensor having micro-lens array separated with trench...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S072000

Reexamination Certificate

active

06933167

ABSTRACT:
An image sensor having micro-lenses is disclosed. The image sensor comprises a plurality of pixels formed in a semiconductor substrate, each pixel including a light sensitive element. A micro-lens is formed over each of the light sensitive elements. Finally, a trench structure surrounds each of the micro-lenses.

REFERENCES:
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patent: 5396090 (1995-03-01), Nakai
patent: 5768023 (1998-06-01), Sawaki
patent: 6274917 (2001-08-01), Fan et al.
patent: 6297071 (2001-10-01), Wake
patent: 6577342 (2003-06-01), Wester
patent: 6818934 (2004-11-01), Yamamoto
patent: 2005/0048690 (2005-03-01), Yamamoto

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