Image sensor having integrated single large scale pixel and...

Details Image sensor having integrated single large scale pixel and... Image sensor having integrated single large scale pixel and...

2006-07-04

2006-07-04

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S223000, C257S290000, C257S292000, C257S293000

Reexamination Certificate

active

07071501

ABSTRACT:
An image sensor is disclosed where individual photo diodes of the respective unit cells separated by an element isolating layer are physically integrated into a single large scale pixel formed widely on a semiconductor substrate so as to hold the pixels in common. A pixel separation pattern is additionally formed on a portion of the large scale photo diode formed so as to electrically separate them. An optimization of the light receiving area of the photo diode, a minimization of the intrusion area of an element isolating layer, and so on are achieved, so that the photo diode recovers an area occupied by an intrusion of the element isolating layer, thus maximizing the light receiving area in an optimal scale and easily preventing electrical impacts between the respective unit cells.

REFERENCES:
patent: 6900480 (2005-05-01), Sugiyama
patent: 2002/0075390 (2002-06-01), Muramatsu et al.
patent: 2003/0127666 (2003-07-01), Lee

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