Image sensor having inner lens

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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Details

C438S070000, C438S610000, C257SE21222

Reexamination Certificate

active

07358110

ABSTRACT:
An image sensor includes an inner lens to enable incident light to reach a condensing lens, so that the incident light may further reach photodiodes. Light loss can be reduced and photosensitivity can be improved. The image sensor includes at least one microlens that focuses incident light onto at least one photosensor that receives a light signal transmitted from the at least one microlens. The image sensor also includes at least one inner lens, disposed between the at least one microlens and the at least one photosensor, having an upper surface of a predetermined curvature to compensate photosensitivity of light received from the at least one microlens.

REFERENCES:
patent: 6372558 (2002-04-01), Yamanaka et al.
patent: 6489227 (2002-12-01), Hsieh et al.
patent: 6858898 (2005-02-01), Hayakawa et al.
patent: 6903395 (2005-06-01), Nakai et al.
patent: 10-2002-0042098 (2002-06-01), None
patent: 10-2004-0008911 (2004-01-01), None

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