Image sensor having exposed dielectric layer in a region...

Details Image sensor having exposed dielectric layer in a region... Image sensor having exposed dielectric layer in a region...

2007-08-21

2009-08-04

Le, Que T (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C250S226000

Reexamination Certificate

active

07569804

ABSTRACT:
Disclosed is an image sensor. The image sensor includes a substrate having photodiodes therein; a dielectric layer on the substrate; a passivation layer on the dielectric layer exposing the dielectric layer in a region corresponding to a first color filter; and a color filter layer on the exposed dielectric layer and the passivation layer.

REFERENCES:
patent: 6200712 (2001-03-01), Fan et al.
patent: 10-2004-0000877 (2004-01-01), None
patent: 10-2006-0010899 (2006-02-01), None
patent: 10-2006-0072495 (2006-06-01), None
Shang Won Kim; CMOS Image Sensor and Fabricating Method Thereof to Eliminate Necessity of Additional Process for Planarizing Underlying Part; Publication No. 1020060072495 A; Publication Date Jun. 28, 2006; Korean Patent Abstracts; Korean Intellectural Property Office.
Hyung Jun Han; Image Sensor Without Color Filter and Fabricating Method Thereof to Improve Light Sensitivity of Image Sensor; Publication No. 1020060010899 A; Publication Date Feb. 3, 2006; Korean Patent Abstracts; Korean Intellectural Property Office.
Myeong An Jung: CMOS Image Sensor Having Concave and Convex Type Microlens and Manufacturing Method Thereof; Publication No. 1020040000877; Publication Date Jan. 7, 2004; Korean Patent Abstracts; Korean Intellectual Property Office.

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