Image sensor having curved micro-mirrors over the sensing...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S070000, C438S072000

Reexamination Certificate

active

07888159

ABSTRACT:
The invention involves the integration of curved micro-mirrors over a photodiode active area (collection area) in a CMOS image sensor (CIS) process. The curved micro-mirrors reflect light that has passed through the collection area back into the photo diode. The curved micro-mirrors are best implemented in a backside illuminated device (BSI).

REFERENCES:
patent: 5122669 (1992-06-01), Herring
patent: 2005/0088753 (2005-04-01), Shimizu
patent: 2006/0057764 (2006-03-01), Pan et al.
patent: 2006/0061674 (2006-03-01), Iida
patent: 04218965 (1992-08-01), None
patent: WO 2006/080592 (2006-08-01), None
European Search Report and Search Opinion, Reference RJB/P417620EP, Date of Completion of the search: Feb. 6, 2008. (11Pages).
EP 07 118 824.7—European Office Action dated Jul. 12, 2010 (7 pages).

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