Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1994-10-20
1997-01-28
Tran, Minhloan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257242, 257246, 257249, 257250, 257443, 257448, H01L 27148
Patent
active
055980171
ABSTRACT:
A number of electrode sets each respectively consisting of a number of gate electrodes disposed at each of matrix-addressed charge-coupled device ("CCD") registers are separately arranged in a column direction of the registers, the gate electrodes in each of the electrode sets being separately arranged in a different direction from the column direction, and a combination of interconnections is provided among conductors for selectively applying a number of pulse voltages different in phase to the gate electrodes in each of the electrode sets. The pulse voltages are applied with a combination of different phases to the gate electrodes in each of the electrode sets, and the combination of the different phases are changed, thereby controlling the position of a sensitivity barycenter of each of the electrode sets to raise the resolution of an image sensor.
REFERENCES:
patent: 4500915 (1985-02-01), Koike et al.
NEC Corporation
Tran Minhloan
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