Image sensor for reduced dark current

Details Image sensor for reduced dark current Image sensor for reduced dark current

2007-04-17

2007-04-17

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S187000, C257S291000, C257S292000, C257S461000, C257S462000

Reexamination Certificate

active

10740599

ABSTRACT:
A method and structure for reducing dark current in an image sensor includes preventing unwanted electrons from being collected in the photosensitive region of the image sensor. In one embodiment, dark current is reduced by providing a deep n-type region having an n-type peripheral sidewall formed in a p-type substrate region underlying a pixel array region to separate the pixel array region from a peripheral circuitry region of the image sensor. The method and structure also provide improved protection from blooming.

REFERENCES:
patent: 6369413 (2002-04-01), Hynecek
patent: 6403998 (2002-06-01), Inoue

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