Image sensor driving method with high-speed voltage response

Facsimile and static presentation processing – Facsimile – Specific signal processing circuitry

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358482, 357 30, H04N 5335

Patent

active

051363895

ABSTRACT:
A method for driving an image sensor, the image sensor including a pair of first and second main electrodes fabricated on a semiconductor layer in such a manner that the first and second main electrodes are separated with each other via a light receiving region. An insulating layer is stacked on the semiconductor layer and an auxiliary electrode then stacked on the insulating layer. The method includes the steps of applying a constant bias voltage to the auxiliary electrode over both a read time period and a non-read time period of a signal current of the image sensor.

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Saika et al., "Integrated a-Si:H Linear Image Sensor Using TFT Type Photo-Sensor," Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Tokyo, 1987, pp. 509-510.

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