Image sensor device with submicron structure

Details Image sensor device with submicron structure Image sensor device with submicron structure

2011-01-25

2011-01-25

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S184000, C257S257000, C257S290000, C257SE31058

Reexamination Certificate

active

07875949

ABSTRACT:
An image sensor device is disclosed. The image sensor device comprises a substrate having a pixel region and at least one integrated circuit in the substrate of the pixel region. A photodiode is disposed on the substrate of the pixel region, comprising a lower electrode, a transparent upper electrode and a photoelectric conversion layer. The lower electrode is disposed on the substrate and is electrically connected to the integrated circuit. The photoelectric conversion layer is disposed on the lower electrode and has a submicron structure therein. The transparent upper electrode is disposed on the photoelectric conversion layer.

REFERENCES:
patent: 4453184 (1984-06-01), Hamakawa et al.
patent: 6288388 (2001-09-01), Zhang et al.
patent: 6709885 (2004-03-01), Uppal et al.
patent: 2007/0279501 (2007-12-01), Goto et al.

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