Image sensor device on insulating surface

Details Image sensor device on insulating surface Image sensor device on insulating surface

1995-03-14

1998-03-24

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 72, 257290, 257291, 257292, 257443, 257446, 349 43, 349 46, 349 47, H01L 31062, H01L 31113

Patent

active

057316007

ABSTRACT:
An image sensor device comprising a gate electrode provided on an insulating surface, a gate insulating film provided on the gate electrode, an active region, provided on the gate insulating film, for generating a carrier upon light irradiation, and doped regions provided with the active region between the doped regions. The optical carrier generated in the active region by light irradiation to the active region flows between the doped regions as current. The light irradiation can be deleted from this current with a high sensitivity.

REFERENCES:
patent: 5196911 (1993-03-01), Wu
patent: 5495119 (1996-02-01), Ikeuchi
patent: 5591990 (1997-01-01), Misawa et al.
Transactions On Electron Devices, vol. ED-32, No. 8, Aug. 1985, pp. 1559-1562,"High-Gain Photodectors in Thin Film Transistors Fabricated from Laser-Crystallized Silicon on Fused Silica", A. Chiang et al.
ITE Technical Report, vol. 18, No. 4, pp. 19-24, IPU'94, Yamada et al., Jan. 1994, pp. 19-24.

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