Image sensor device and method to form image sensor device

Details Image sensor device and method to form image sensor device Image sensor device and method to form image sensor device

2006-06-13

2006-06-13

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular signal path connections

C257S435000, C257S445000, C250S208100, C250S239000

Reexamination Certificate

active

07061028

ABSTRACT:
A new method to form an image sensor device is achieved. The method comprises forming an image sensing array in a substrate comprising a plurality of light detecting diodes with spaces between the diodes. A first dielectric layer is formed overlying the diodes but not the spaces. The first dielectric layer has a first refractive index. A second dielectric layer is formed overlying the spaces but not the diodes. The second dielectric layer has a second refractive index that is larger than the first refractive index. A new image sensor device is disclosed.

REFERENCES:
patent: 4660207 (1987-04-01), Svilans
patent: 5298733 (1994-03-01), Ehmke et al.
patent: 5648874 (1997-07-01), Sawaki et al.
patent: 6001540 (1999-12-01), Huang et al.
patent: 6020944 (2000-02-01), Hoshi
patent: 6195196 (2001-02-01), Kimura et al.
patent: 6807353 (2004-10-01), Fleming et al.
patent: 6815654 (2004-11-01), Fujieda et al.

Affiliated with

Also associated with

Rating

Image sensor device and method to form image sensor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Image sensor device and method to form image sensor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Image sensor device and method to form image sensor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3699711