Image sensor device and manufacturing method thereof

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S291000, C257S292000, C257S293000, C257SE27131, C257SE27132, C257SE27133

Reexamination Certificate

active

07608473

ABSTRACT:
An image sensor and a manufacturing method thereof are provided. The image sensor includes a plurality of sensors, an inter-layer dielectric layer formed over the sensors, a first inter-metal dielectric layer formed over the inter-layer dielectric layer, and a plurality of first via walls formed in the first inter-metal dielectric layer, wherein each of the first via walls is formed around each of the sensors. In addition, the image sensor further includes a second inter-metal dielectric layer formed over the first inter-metal dielectric layer and a plurality of second via walls formed in the second inter-metal dielectric layer, wherein each of the second via walls is formed around each of the sensors. Therefore, the light leakage between different pixels and the problem of crosstalk are solved, and the spatial resolution and the photo sensitivity of the image sensor are enhanced.

REFERENCES:
patent: 6838715 (2005-01-01), Bencuya et al.
patent: 2002/0024001 (2002-02-01), Hiyama et al.
patent: 2004/0251395 (2004-12-01), Takahashi et al.
patent: 2005/0040317 (2005-02-01), Yaung
patent: 2006/0014314 (2006-01-01), Yaung et al.
patent: 2006/0081898 (2006-04-01), Wang et al.
patent: 2005-20020 (2009-03-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Image sensor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Image sensor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Image sensor device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4139224

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.