Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2008-01-22
2008-01-22
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S292000, C257S396000, C257S446000, C257S461000, C257SE31084, C438S075000, C438S221000, C438S237000, C438S425000, C438S443000, C438S981000
Reexamination Certificate
active
11379057
ABSTRACT:
A semiconductor substrate is provided on which a plurality of shallow trench isolations (STI) defining a plurality of active areas are formed. The active areas comprise a photo sensing region, and a plurality of photodiodes are formed in each photo sensing region. Then a local oxidation of silicon isolation (LOCOS) layer is formed by performing a LOCOS process. Thereafter a plurality of gates are respectively formed in each active area, where the gates partially overlap the LOCOS layer. Finally doped regions are formed in the semiconductor substrate where the gate does not cover the LOCOS layer.
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Hsu Winston
Smith Zandra V.
Thomas Toniae M
United Microelectronics Corp.
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