Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-10-04
2005-10-04
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S052000, C257S072000, C257S294000, C257S451000, C257S749000
Reexamination Certificate
active
06952022
ABSTRACT:
The present invention relates to an image sensor comprising an amorphous silicon thin-film transistor optical sensor which functions as an image sensor used for an X-ray photography device, a fingerprint recognition apparatus, a scanner, etc., and a method of manufacturing the image sensor. Since the thin-film transistor optical sensor according to the present invention has a high-resistance silicon region by disposing an offset region in a channel region, a dark leakage current of the optical sensor remains in a low level even under a high voltage. Therefore, it is possible to apply a high voltage to the thin-film transistor optical sensor according to the present invention so that the image senor can be sensitive to a weak light. In addition, since the storage capacitance in the image sensor is formed in a double structure, the image sensor has a high value of capacitance. Furthermore, since a lower common electrode is electrically connected to an upper common electrode, the image sensor has a stable structure.
REFERENCES:
patent: 6445003 (2002-09-01), Chang et al.
patent: 6570197 (2003-05-01), Joo
Korean Patent Abstract (Korean Publication No. 1020010035260, publication date May 7, 2001).
Korean Patent Abstract (Korean Publication No. 1020010088443, publication date Sep. 26, 2001).
Hur Ji Ho
Jang Jin
Nam Hyun Chul
Huynh Andy
Morgan & Finnegan , LLP
Silicon Display Technology
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