Image sensor comprising thin film transistor optical sensor...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

Reexamination Certificate

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C257S052000, C257S072000, C257S294000, C257S451000, C257S749000

Reexamination Certificate

active

06952022

ABSTRACT:
The present invention relates to an image sensor comprising an amorphous silicon thin-film transistor optical sensor which functions as an image sensor used for an X-ray photography device, a fingerprint recognition apparatus, a scanner, etc., and a method of manufacturing the image sensor. Since the thin-film transistor optical sensor according to the present invention has a high-resistance silicon region by disposing an offset region in a channel region, a dark leakage current of the optical sensor remains in a low level even under a high voltage. Therefore, it is possible to apply a high voltage to the thin-film transistor optical sensor according to the present invention so that the image senor can be sensitive to a weak light. In addition, since the storage capacitance in the image sensor is formed in a double structure, the image sensor has a high value of capacitance. Furthermore, since a lower common electrode is electrically connected to an upper common electrode, the image sensor has a stable structure.

REFERENCES:
patent: 6445003 (2002-09-01), Chang et al.
patent: 6570197 (2003-05-01), Joo
Korean Patent Abstract (Korean Publication No. 1020010035260, publication date May 7, 2001).
Korean Patent Abstract (Korean Publication No. 1020010088443, publication date Sep. 26, 2001).

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