Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2004-10-13
2008-11-18
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
C257S431000, C257S432000, C257S417000, C257SE33076, C257SE31115
Reexamination Certificate
active
07453129
ABSTRACT:
In accordance with the invention, an improved image sensor comprises an array of germanium photosensitive elements integrated with a silicon substrate and integrated with silicon readout circuits. The silicon transistors are formed first on a silicon substrate, using well known silicon wafer fabrication techniques. The germanium elements are subsequently formed overlying the silicon by epitaxial growth. The germanium elements are advantageously grown within surface openings of a dielectric cladding. Wafer fabrication techniques are applied to the elements to form isolated germanium photodiodes. Since temperatures needed for germanium processing are lower than those for silicon processing, the formation of the germanium devices need not affect the previously formed silicon devices. Insulating and metallic layers are then deposited and patterned to interconnect the silicon devices and to connect the germanium devices to the silicon circuits. The germanium elements are thus integrated to the silicon by epitaxial growth and integrated to the silicon circuitry by common metal layers.
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King Clifford Alan
Rafferty Conor S.
Dang Phuc T
Noble Peak Vision Corp.
Tran Thanh Y
Wolf Greenfield & Sacks P.C.
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