Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-09-05
2011-10-25
Kim, Jay C (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S222000, C257S225000, C257S290000, C257S291000, C257S292000, C257S428000, C257S431000, C257S432000, C257S443000, C257S446000, C257S448000, C257S459000, C257S461000, C257SE27122, C257SE27127, C257SE27130, C257SE27131, C257SE27132, C257SE27133, C257SE27150, C257SE27151, C257SE27152
Reexamination Certificate
active
08044478
ABSTRACT:
Provided is an image sensor. The image sensor can include a readout circuitry on a first substrate. An interlayer dielectric is formed on the first substrate, and comprises a lower line therein. A crystalline semiconductor layer is bonded to the interlayer dielectric. A photodiode can be formed in the crystalline semiconductor layer, and comprises a first impurity region and a second impurity region. A via hole can be formed passing through the crystalline semiconductor layer and the interlayer dielectric to expose the lower line. A plug is formed inside the first via hole to connect with only the lower line and the first impurity region. A device isolation region can be formed in the crystalline semiconductor layer to separate the photodiode according to unit pixel.
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Office Action dated Jun. 7, 2011 in German Application No. 10-2008-046101, filed Sep. 5, 2008.
Dongbu Hitek Co., Ltd.
Kim Jay C
Saliwanchik Lloyd & Eisenschenk
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