Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2007-12-25
2007-12-25
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C257S294000, C250S214100
Reexamination Certificate
active
11322043
ABSTRACT:
An image sensor and a fabrication method thereof are provided. The image sensor includes: a first photodiode formed in a substrate and receiving a first color; a second photodiode formed in the substrate apart from the first photodiode and receiving a second color with a wavelength longer than that of the first color; a third photodiode formed in the substrate apart from the first photodiode and the second photodiode and receiving a third color with a wavelength longer than that of the second color; and a passivation layer formed on the substrate and having different regional thicknesses whose magnitude increases in order of a first region of the passivation layer corresponding to a first color region, a second region of the passivation layer corresponding to a second color region and a third region of the passivation layer corresponding to a third color region.
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Coleman W. David
Greenberg & Traurig, LLP
Magna-Chip Semiconductor, Ltd.
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