Image sensor and sensor unit

Details Image sensor and sensor unit Image sensor and sensor unit

2011-05-31

2011-05-31

Nguyen, Thinh T (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Responsive to non-optical, non-electrical signal

C257S236000, C257S230000, C257S246000, C257SE31001

Reexamination Certificate

active

07952121

ABSTRACT:
An image sensor includes a charge storage portion for storing and transferring signal charges, a first electrode for forming an electric field storing the signal charges in the charge storage portion, a charge increasing portion for increasing the signal charges stored in the charge storage portion and a second electrode for forming another electric field increasing the signal charges in the charge increasing portion, wherein the quantity of the signal charges storable in the charge storage portion is not less than the quantity of the signal charges storable in the charge increasing portion.

REFERENCES:
patent: 4139782 (1979-02-01), Ablassmeier
patent: 6862333 (2005-03-01), Kashima et al.
patent: 2005/0270389 (2005-12-01), Wuori et al.
patent: 2008/0048212 (2008-02-01), Nakashima et al.
S.M. Sze , Physics of Semiconductor Devices ( May 1981 ) Jhon Wiley & Sons , chapter 7, p. 417.
Yonemoto, “Basic and Application of CCD/CMOS Image Sensor,” CQ Shuppan-sha, Aug. 10, 2003, pp. 189-191 and 204.

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